Equipment information	Maker: ㈱パスカル/Pascal corporation Specs: Sputter deposition is a physical vapor deposition (PVD) method of depositing thin films by sputtering, that is ejecting, material from a "target," that is source, which then deposits onto a "substrate," such as a silicon wafer. This equipment can deposit multi composition film by using simultaneous sputtering of three target. [Specifications] ●Vacuum level: ≤ 5 x 10^-5 Pa ●Leak rate: ≤ 1 x 10^-8 Pa・cm3/sec ●Substrate heating mechanism: infrared lamp heating mechanism ●Substrate heating temperature: Max. 900˚C ●Cathode Magnetron cathode Target size: 1 inch Target materials: varied (mechanical chuck method or bonding method) Cooling system: water-cooling system ●Gas supply system: variable leak valve Location: 301 at I2CNER buildingⅡ Other information:
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Person in charge	atsushi_takagaki

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[Contact]
Prof. A. Takagaki Ext. 90-6711 (Ito Campus)
atakagak@cstf.kyushu-u.ac.jp

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